|
考研英语阅读题源来源广泛,取自《经济学人》、《纽约时报》、《新闻周刊》、《卫报》、《Nature》、《华盛顿邮报》、《The Scientist》等等【了解更多题源】,因此考生可以多关注一下此类文章。下面新东方在线分享一些考过的题源文章,并附上详细解析,本阶段复习,大家可以看看。
From The New York Times
By John Markoff
Nov.11,2006
Alloy Holds Out Promise of Speedier Memory Chip
Scientists at IBM and two partner companies have developed a promising
material that they believe will lead to a new kind of computer memory chip able
to meet the growing appetite for storing digital music, pictures and video.
The advance will be described in a technical paper to be presented Monday
at the International Electron Devices Meeting in San Francisco by researchers
from IBM and two computer memory manufactures, Qimonda and Macronix. The
scientists have designed a new semiconductor alloy derived from materials
currently used in optical storage devices like CDs and DVDs.
This team is not the only entrant in the race to find alternatives to flash
memory, the prevailing form of nonvolatile storage--so called because it can
retain information without power. Intel and STMicroelectronics have formed a
partnership to pursue the technology, and, separately, Samsung has made
announcements in the field.
Intel has shown 128-megabit prototype chips and said it planned to
introduce products in 2007. Samsung has described a 512-megabit prototype that
it expects to market in 2008.
IBM scientists say their announcement is significant because the company's
new material has performance advantages over alloys now in use in prototypes
made by others in the industry
If the technology proves cheap enough to manufacture, it will create a new
competitor in the $18.6 billion market for the inexpensive erasable memory chips
that have proliferated in mobile phones, music players and other consumer
gadgets in recent years.
Moreover, although IBM has withdrawn from the memory chip business, the
company said it was intensely interested in the technology for corporate
computing applications like transaction processing. Faster nonvolatile memory
could change the design of the microprocessors that IBM makes, speeding up a
variety of basic operations.
The new memory technology could potentially be added to a future generation
of the IBM Power PC microprocessor, according to Spike Narayan, a senior manager
at the company's Almaden Research Center here.
Over two and a half yeas, in a trial-and-error process, scientists here
explored a class of materials that can be switched from an amorphous state to a
crystalline one and then back again by repeated heating. The compounds, known as
GST, or germanium-antimony-tellurium phase change materials, are routinely used
today to make inexpensive optical disks that are read from and written to with
laser beams.
The IBM led team has proved that the same effect can be realized by using a
small electrical current. That has made it possible to build tiny memory cells
that can store digital 1's and 0's by means of electricity rather than light.
IBM scientists say the new material is an alloy composed of just germanium and
antimony, and is referred to as GS. The scientists do not describe the material
in detail in the paper.
The advantage of the new material, according to the scientists, is that it
can be used to create switches more than 500 times as fast as today's flash
chips. Moreover, the prototype switch developed by the scientists is just 3
nanometers high by 20 nanometers wide, offering the promise that the technology
can be shrunk to smaller dimensions than could be attained by flash
manufacturers.
The current generation of flash memory chips store as much as 32 billion
bits on a chip .But that technology is likely to become increasingly problematic
as chip makers struggle to reach ever finer dimensions.
Reached for comment later last week, Vivek Subramanian, an associate
professor of electrical engineering at the University of California, Berkeley,
who has read the technical paper describing the project, said, "Everybody
recognizes that scaling flash is going to be a problem in the long run. This
looks like a really attractive technology that is both scaleable and consumes
little power."
Industry executives said that the new materials might bolster the computer
and consumer electronics industries just when it appeared they were nearing
fundamental engineering limits.
"This is a Christmas present for the industry because it shatters so many
things at once, "said Richard Doherty, president of Envisioneering, a computer
industry consulting firm in Seaford, N.Y.,who has been briefed on the technical
paper. "This could change the basic equation between processors, local storage
and communications."
Today's flash memories are largely divided into two distinct types called
NOR and NAND, with different performance characteristics. The principal
disadvantage of the flash design is that data cannot be addressed one bit at a
time but only in larger blocks of data.
In contrast, phase change memories will be addressable at the bit level.
Such a capability means that the new memories will be more flexible than flash
memory and can be used in a wider variety of applications and computer
designs.
|
|